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National Institute of Technology, Meghalaya

Last Date - 30-03-2022
City / State - Across India , Across India
Education - B.E/B.Tech, ME/M.Tech
Advt. No. - NITMGH/ES/DST/TDT/DDP-36/2021-22
National Institute of Technology, Meghalaya

 Project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)”

Duration: Initial appointment is for one year, which is extendable up to the end of the project duration based on the performance of the candidate.


Post Name Junior Research Fellow
No. of Vacancy 1
Pay Rs. 31,000.00 + HRA @ 8% pm
Educational Qualification

B.Tech./M.Tech. in Electronics Engineering with specialization in Electronics/VLSI/ MEMS and related areas, with a minimum of 60% marks. The candidates must have cleared GATE exam. 

Candidates with B.Tech. degree only must have a valid Gate Score.    

Desirable : Candidates having experience of working with MEMS / Semiconductor simulation softwares and their fabrication will be preferred.

Age upto 28 years

Principal investigator: Dr. PRADEEP KUMAR RATHORE (any queries should be communicated to pradeeprathore@nitm.ac.in)

How to Apply : Append your self-attested scanned copies of the certificates, the application form and send to pradeeprathore@nitm.ac.in as a single PDF file on or before 30th March 2022.

The subject of the email should be “Application for the post of JRF in DST Project (DST/TDT/DDP-36/2021)”.

The shortlisted candidates will be informed through email for interview by 1 April 2022.

Physical/Skype/Google Meet based Interview will be held tentatively on 3 April 2022 (tentatively). The exact time of interview will be informed through email.