Project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)”
Duration: Initial appointment is for one year, which is extendable up to the end of the project duration based on the performance of the candidate.
|Post Name||Junior Research Fellow|
|No. of Vacancy||1|
|Pay||Rs. 31,000.00 + HRA @ 8% pm|
B.Tech./M.Tech. in Electronics Engineering with specialization in Electronics/VLSI/ MEMS and related areas, with a minimum of 60% marks. The candidates must have cleared GATE exam.
Candidates with B.Tech. degree only must have a valid Gate Score.
Desirable : Candidates having experience of working with MEMS / Semiconductor simulation softwares and their fabrication will be preferred.
|Age||upto 28 years|
Principal investigator: Dr. PRADEEP KUMAR RATHORE (any queries should be communicated to firstname.lastname@example.org)
How to Apply : Append your self-attested scanned copies of the certificates, the application form and send to email@example.com as a single PDF file on or before 30th March 2022.
The subject of the email should be “Application for the post of JRF in DST Project (DST/TDT/DDP-36/2021)”.
The shortlisted candidates will be informed through email for interview by 1 April 2022.
Physical/Skype/Google Meet based Interview will be held tentatively on 3 April 2022 (tentatively). The exact time of interview will be informed through email.