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National Institute Of Technology Meghalaya, NIT Meghalaya

Last Date - 30-11-2021
City / State - Meghalaya , Meghalaya
Education - ME/M.Tech
Advt. No. - NITMGH/ES/DST/TDT/DDP-36/2021-22/994
National Institute Of Technology Meghalaya, NIT Meghalaya

Project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)”

 under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST), Government of India in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya.

Post Name Junior Research Fellow
No. of Vacancy 1
Pay Rs. 31,000.00 + HRA @ 8% pm
Educational Qualification

M.Tech./M.E. in Electronics Engineering with specialization in VLSI, MEMS, Electronics and related areas with a minimum of 60% marks. The candidates must have cleared GATE exam

Desirable qualifications : Candidates having experience of working with MEMS/Semiconductor simulation softwares and hands-on-experience in fabrication of MEMS/Semiconductor devices will be preferred for the JRF position in the project.

Age Must not be over 28 years

Principal investigator: Dr. PRADEEP KUMAR RATHORE (any queries should be communicated to (pradeeprathore@nitm.ac.in)

How to Apply - Append your self-attested scanned copies of the certificates, the application form and send to pradeeprathore@nitm.ac.in as a single PDF file on or before 30th November 2021
The subject of the email should be “Application for the post of JRF in DST Project (DST/TDT/DDP-36/2021)”.

The shortlisted candidates will be informed through email for interview by 2nd December 2021.

Physical/Skype/Google Meet based Interview will be held tentatively on 3th December 2021. The exact time of interview will be informed through email.