Project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)”
under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST), Government of India in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya.
|Post Name||Junior Research Fellow|
|No. of Vacancy||1|
|Pay||Rs. 31,000.00 + HRA @ 8% pm|
M.Tech./M.E. in Electronics Engineering with specialization in VLSI, MEMS, Electronics and related areas with a minimum of 60% marks. The candidates must have cleared GATE exam
Desirable qualifications : Candidates having experience of working with MEMS/Semiconductor simulation softwares and hands-on-experience in fabrication of MEMS/Semiconductor devices will be preferred for the JRF position in the project.
|Age||Must not be over 28 years|
Principal investigator: Dr. PRADEEP KUMAR RATHORE (any queries should be communicated to (firstname.lastname@example.org)
How to Apply - Append your self-attested scanned copies of the certificates, the application form and send to email@example.com as a single PDF file on or before 30th November 2021
The subject of the email should be “Application for the post of JRF in DST Project (DST/TDT/DDP-36/2021)”.
The shortlisted candidates will be informed through email for interview by 2nd December 2021.
Physical/Skype/Google Meet based Interview will be held tentatively on 3th December 2021. The exact time of interview will be informed through email.