Recruitment 2017 - Applications are invited for filling up the following post under the project entitled: Development of Highly Sensitive Photo-detector based on Dielectrophoretic Assembly of TiS3 Nanoribbons sponsored by Science and Engineering Research Board(SERB), DST, Govt. of India. The project duration is 03(three) years
|Name of the Post||Junior Research Fellow (JRF)|
|No. of Vacancy||01|
|Remuneration||As per Govt. rules.|
|Educational Qualification||M. Tech. in Nanoscience and Nanotechnology, Optoelectronics, Electronics and communication & Material science with 60% marks or equivalent CGPA. or M.Sc. with NET qualification in Electronics, Physics, Chemistry, Nanoscience, Nanotechnology with 60% marks or equivalent CGPA.
Desirable : Preference will be given to those candidates having at 06 months research experience on 2D materials and dielectrophoretic depositions.
How to Apply : Candidate(s) possessing the requisite qualifications send their applications through email(firstname.lastname@example.org) to the Principal Investigator by 03rd August, 2017 giving complete bio-data (with e-mail address and mobile no.)
Dr. Prabhash Mishra,
Centre for Nanoscience and Nanotechnology, JMI.
* Please refer to the official Website or Employment Notice
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